Dr. Shen is a Professor in the Department of Electrical Engineering. Before joining CCNY, he worked at Nortel Networks (Ottawa, Canada), National Research Council (Ottawa, Canada), Tohoku University (Sendai, Japan), Laboratoire de spectrométrie physique (Grenoble, France), and Fraunhofer Institute for Applied Solid State Physics (Freiburg, Germany).
Dr. Shen's research is focused on the growth of various compound semiconductor materials by molecular beam epitaxy (MBE). He pioneered the research on III-V ferromagnetic semiconductors. His current research interest is on the study of growth and properties of wide band gap II-VI semiconductors (including ZnO-based materials) and their application in intersubband photonic devices. Dr. Shen has published more than 120 peer-reviewed articles plus 180 conference and meeting presentations. His journal publications have been cited for more than 5000 times.
Dr. Shen is a member of the American Physical Society, the American Vacuum Society, and American Association for the Advancement of Science. He is a Program Committee member of the 15th International Conference on II-VI Compounds (2011, Mexico), an Organizing Committee member of the 18th International Conference on Molecular Beam Epitaxy (2014, USA), and the proceedings editor of the 26th North American Molecular Beam Epitaxy Conference (2009, USA) and the 30th North American Molecular Beam Epitaxy Conference (2013, Canada). He is an Invited Speaker at the 12th International Conference on Intersubband Transitions in Quantum Wells.

Semiconductor Materials and Devices (EE 33900)

Physical Electronics (EE I5400)

Molecular beam epitaxy (MBE), compound semiconductor materials (III-V, II-VI and magnetic) and devices.

Selected Publications: (Total over 120 with over 5000 citations. Google Scholar Citations)

•    Kuaile Zhao, Guopeng Chen, Bing-Sheng Li, and Aidong Shen, “Mid-infrared intersubband absorptions in ZnO/ZnMgO multiple quantum wells”, Appl. Phys. Lett. 104, 212104 (2014).
•    Guopeng Chen, Kuaile Zhao, Maria C. Tamargo, and Aidong Shen, “Near infrared intersubband absorption of CdSe/MgSe quantum wells grown on InP substrate with an InAlAs buffer layer”, J. Vac. Sci. Technol. B 32 02C105 (2014).
•    Aidong Shen, Arvind P. Ravikumar, Guopeng Chen, Kuaile Zhao, Adrian Alfaro-Martinez, Thor Garcia, Joel de Jesus, Maria C. Tamargo, and Claire Gmachl, “MBE growth of ZnCdSe/ZnCdMgSe quantum-well infrared photodetectors”, J. Vac. Sci. Technol. B 31, 03C113 (2013).
•    Aidong Shen, Guopeng Chen, Kuaile Zhao, Jung-Tso Lai, and Maria C. Tamargo, “Metastable CdSe/MgSe quantum wells prepared by MBE with near IR intersubband absorption”, J. Vac. Sci. Technol. B 31, 03C103 (2013).
•    J. De Jesus, T. A. Garcia, S. Dhomkar, A. Ravikumar, C. Gmachl, G. Chen, A. Shen, D. Ferizovic, M. Muñoz, M. C. Tamargo, “Characterization of the three-well active region of a quantum cascade laser using contactless electroreflectance”, J. Vac. Sci. Technol. B 31, 03C134 (2013).
•    T. A. Garcia, S. Hong, M. Tamargo, J. de Jesus, V. Deligiannakis, A. Ravikumar, C. Gmachl, A. Shen, “Improved Electrical Properties and Crystalline Quality of II-VI Heterostructures for Quantum Cascade Lasers”, J. Vac. Sci. Technol. B 31, 03C133 (2013).
•    Arvind P. Ravikumar, Guopeng Chen, Kuaile Zhao, Yue Tian, Paul Prucnal,  Maria C. Tamargo, Claire Gmachl, and Aidong Shen “Room temperature and high responsivity short wavelength II-VI quantum well infrared photodetector”, Appl. Phys. Lett. 102, 161107 (2013).
•    Arvind P. Ravikumar, Adrian Alfaro-Martinez, Guopeng Chen, Kuaile Zhao, Maria C. Tamargo, Claire F. Gmachl, and Aidong Shen, “ZnCdSe/ZnCdMgSe quantum well infrared photodetector”, Optics Express 20, 22391-22397 (2012).
•    Kuaile Zhao, and Aidong Shen, “Increasing ZnO growth rate by modifying oxygen plasma conditions in plasma-assisted molecular beam epitaxy”, World J. Cond. Mat. Phys. 2, 160-164 (2012).
•    K. Zhao, L. Ye, M.C. Tamargo, and A. Shen, “Plasma-assisted MBE growth of ZnO on GaAs substrate with a ZnSe buffer layer”, Phy. Status Solidi c 9, 1809-1812 (2012).
•    K. Zhao, S. Wang, and A. Shen, “ZnO grown on (111) ZnS substrates by plasma-assisted molecular beam epitaxy”, J. Elec. Mater. 41, 2151-2154 (2012).
•    R. Moug, A. Alfaro-Martinez, L. Peng, T. Garcia, V. Deligiannakis, A. Shen, and M. Tamargo, “Selective etching of InGaAs/InP substrates from II-VI multilayer heterostructures”, Phy. Status Solidi c 9, 1728-1731 (2012).
•    R.T. Moug, H. Sultana, Y. Yao, A. Alfaro-Martinez, L. Peng, T. Garcia, A. Shen, C. Gmachl, and M.C. Tamargo, “Optimization of Molecular Beam Epitaxy (MBE) Growth for the Development of Mid-Infrared (IR) II–VI Quantum Cascade Lasers”, J. Elec. Mater. 41, 944-947 (2012).
•    Qiang Zhang, Aidong Shen, Igor L. Kuskovsky, and Maria C. Tamargo, “Role of magnesium in band gap engineering of sub-monolayer type-II ZnTe quantum dots embedded in ZnSe”, J. Appl. Phys. 110, 034302 (2011).
•    Yu Yao, Adrian Alfaro-Martinez, Kale J. Franz, William O. Charles, Aidong Shen, Maria C. Tamargo, and Claire F. Gmachl, “Room temperature and narrow intersubband electroluminescence from ZnCdSe/ZnCdMgSe quantum cascade laser structures”, Appl. Phys. Lett. 99, 041113 (2011).
•    Bidisha Roy, Aidong Shen, Maria C. Tamargo, and Igor L. Kuskovsky, “Effects of varying MBE growth conditions on layered Zn-Se-Te structures”, J. Elec. Materials 40, 1775-1780 (2011).
•    J.D. Wu, Y.S. Huang, D.Y. Lin, W.O. Charles, A. Shen, M.C. Tamargo, and K.K. Tiong, "Temperature-dependent photoluminescence and contactless electroreflectance characterization of a ZnCdSe/ZnCdMgSe asymmetric coupled quantum well structure", J. Alloys & Compounds, 509, 3751-3755 (2011).
•    Aidong Shen (ed.), "Papers from the 26th North American Molecular Beam Epitaxy Conference", (AIP Press, New York , 2010), ISBN 978-0-9823012-4-1.
•    J.D. Wu, Y.S. Huang, B.S. Li, A. Shen, M.C. Tamargo, and K.K. Tiong, "Photoluminescence and photoreflectance characterization of ZnCdSe/MgSe multiple quantum wells", J. Appl. Phys. 108, 123105 (2010).
•    Qiang Zhang, Yunpu Li, Xuejun Liu, Daniela Pagliero, Aidong Shen, Carlos A. Meriles and Maria C. Tamargo, "Dependence of electron spin relaxation times on the crystal orientation of CdTe grown on (100)ZnSe/GaAs substrates", Phys. Stat. Sol. (c) 7, 1665 (2010).
•    J.D. Wu, C. T. Huang, Y.S. Huang, W.O. Charles, A. Shen, and M.C. Tamargo, "Photoreflectance and Fourier transform infrared spectroscopy study of intersubband transitions of a ZnxCd1-xSe/Znx′Cdy′Mg1-x′-y′Se asymmetric coupled quantum well structure for quantum cascade laser application", Appl. Phys. Lett. 95, 191905 (2009).
•    A. Shen, W.O. Charles, B.S. Li, K.J. Franz, C. Gmachl, Q. Zhang, and M.C. Tamargo, "Wide band gap II-VI selenides for short wavelength intersubband devices", J. Crystal Growth, 311, 2109 (2009).
•    B.S. Li, K. Akimoto, and A. Shen, "Growth of Cu2O thin films with high hole mobility by introducing a low temperature buffer layer", J. Crystal Growth 311, 1102 (2009).
•    QiangZhang, William Charles, Bingsheng Li, Aidong Shen, Carlos A. Meriles, and Maria C. Tamargo,"Control of crystal orientation of CdTe epitaxial layers grown on (001) GaAs with ZnSe buffer layer by molecular beam epitaxy", J. Crystal Growth, 311, 2603-2607 (2009).
•    B. S. Li, A. Shen, W.O. Charles, Q. Zhang, and M.C. Tamargo, "Mid-infrared intersubband absorption in wide band gap II-VI ZnxCd1-xSe multiple quantum wells with metastable zincblende MgSe barriers", Appl. Phys. Lett., 92, 261104 (2008).
•    Kale J. Franz, William O. Charles, Aidong Shen, Anthony J. Hoffman, Maria C. Tamargo, and Claire Gmachl, "ZnCdSe/ZnCdMgSe quantum cascade electro-luminescence", Appl. Phys. Lett. 92, 121105 (2008).
•    W. O. Charles, A. Shen, K. J. Franz, C. Gmachl, Q. Zhang, Y. Gong, G. F. Neumark, and M. C. Tamargo, "Growth and characterization of ZnCdSe/ZnCdMgSe asymmetric coupled quantum well structures for quantum cascade laser applications", J. Vac. Sci. Technol. B 26, 1171 (2008).
•    B. S. Li, R. Akimoto, and A. Shen, "Thermal annealing effects on intersubband transitions in (CdS/ZnSe)/BeTe quantum wells", Appl. Phys. Lett. 92, 021123 (2008).
•    A. Shen, H. Lu, W. Charles, I. Yokomizo, M. C. Tamargo, K. Franz, C. Gmachl, S.K. Zhang, X. Zhou, R. R. Alfano, and H. C. Liu, "Intersubband absorption in CdSe/ZnCdMgSe self-assembled quantum dots multi-layers", Appl. Phys. Lett. 90, 071910 (2007).
•    H. Lu, A. Shen, W. Charles, I. Yokomizo, M. C. Tamargo, K. Franz, C. Gmachl, and M. Munoz, "Optical Characterization of intersubband transitions of ZnCdSe/ZnCdMgSe multiple quantum well structures characterized by contactless electroreflectance", Appl. Phys. Lett.89, 241921 (2006).
•    H. Lu, A. Shen, M. C. Tamargo, C. Y. Song, and H. C. Liu, S.K. Zhang, R.R. Alfano, M. Munoz, "Midinfrared intersubband absorption in ZnCdSe/ZnCdMgSe multiple quantum well structures", Appl. Phys. Lett. 89, 131903 (2006).
•    M. N. Perez-Paz, H. Lu, A. Shen, F. Jean Mary, D. Akins, and M. C. Tamargo, "Magnesium effects on CdSe Self-Assembled Quantum Dot formation on ZnCdMgSe Layers", J. Crystal Growth 294, 296 (2006).
•    H. C. Liu, R. Dudek, A. Shen, E. Dupont, C. Y. Song, Z. R. Wasilewski, and M. Buchanan, "High absorption (>90%) quantum well infrared photodetectors", Appl. Phys. Lett. 79, 4237 (2001).
•    A. G. U. Perera, S. G. Matsik, B. Yaldiz, H. C. Liu, A. Shen, M. Gao, Z. R. Wasilewski, and M. Buchanan, "Heterojunction wavelength-tailorable far-infrared photodetectors with response out to 70 μm", Appl. Phys. Lett. 78, 2241 (2001).
•    A. Shen, H. C. Liu, M. Gao, E. Dupont, M. Buchanan, J. Ehret, G. J. Brown, and F. Szmulowicz, "Resonant cavity enhanced p-type GaAs/AlGaAs quantum well infrared photodetectors", Appl. Phys. Lett., 77, 2400 (2000).
•    H. C. Liu, C. Y. Song, A. Shen, M. Gao, Z. R. Wasilewski, and M. Buchanan, "GaAs/AlGaAs quantum well photodetector for visible and middle infrared dual-band detection", Appl. Phys. Lett. 77, 2437 (2000).
•    F. Szmulowicz, A. Shen, H. C. Liu, G. J. Brown, Z. R. Wasilewski, and M. Buchanan, "Temperature dependence of photoresponse of p-type GaAs/AlGaAs multiple-quantum wells - theory and experiment", Phys. Rev. B 61, 13798 (2000).
•    A. Shen, H. C. Liu, F. Szmulowicz, M. Buchanan, M. Gao, G. J. Brown, and J. Ehret, "Optimizing well doping density for GaAs/AlGaAs p-type quantum well infrared photodetectors", J. Appl. Phys. 86, 5232 (1999).
•    Beschoten, P.A. Crowell, I. Malajovich, D.D. Awschalom, F. Matsukura, A. Shen, and H. Ohno, "Magnetic circular dichroism studies of carrier-induced ferromagnetism in (Ga,Mn)As", Phys. Rev. Lett. 83, 3073 (1999).
•    A. Shen, F. Matsukura, S.P. Guo, Y. Sugawara, H. Ohno, M. Tani, H. Abe, and H.C. Liu, "Low-temperature molecular beam epitaxial growth of GaAs and (Ga,Mn)As", J. Crystal Growth 202, 679 (1999).
•    S. P. Guo, A. Shen, F. Matsukura, Y. Ohno, and H. Ohno, "InAs and (In,Mn)As nanostructures grown on GaAs (100), (211)B, and (311)B substrates", J. Crystal Growth 202, 684 (1999).
•    H. Ohno, N. Akiba, F. Matsukura, A. Shen, K. Ohtani, and Y. Ohno, "Spontaneous splitting of ferromagnetic (Ga,Mn)As valence band observed by resonant tunneling spectroscopy", Appl. Phys. Lett. 73, 363 (1998).
•    N. Akiba, F. Matskura, A. Shen, Y. Ohno, H. Ohno, A. Oiwa, S. Katsumoto, and Y. Iye, "Interlayer exchange in (Ga,Mn)As/(Al,Ga)As/(Ga,Mn)As semiconducting ferromagnet/nomagnet/ferromagnet trilayer structures", Appl. Phys. Lett. 73, 2122 (1998).
•    A. Shen, H. Ohno, F. Matsukura, H.C. Liu, N. Akiba, Y. Sugawara, T. Kuroiwa, and Y. Ohno, "Superlattice and multilayer structures based on ferromagnetic semiconductor (Ga,Mn)As", Physica B 251, 809 (1998).
•    F. Matsukura, H. Ohno, A. Shen, and Y. Sugawara, "Transport properties and origin of ferromagnetism in (Ga,Mn)As", Phys. Rev. B 57, R2037 (1998).
•    A. Shen, Y. Horikoshi, H. Ohno, and S. P. Guo, "Reflection high-energy electron diffraction oscillations during growth of GaAs at low temperatures under high As overpressure", Appl. Phys. Lett., 71, 1540 (1997).
•    A. Shen, H. Ohno, F. Matsukura, Y. Sugawara, N. Akiba, T. Kuroiwa, A. Oiwa, A. Endo, S. Katsumoto and Y. Iye, "Epitaxy of (Ga,Mn)As, a new diluted magnetic semiconductor based on GaAs", J. Crystal Growth, 176, 1069 (1997).
•    H. Ohno, A. Shen, F. Matsukura, A. Oiwa, A. Endo, S. Katsumoto and Y. Iye, "(Ga,Mn)As: a new diluted magnetic semiconductor based on GaAs", Appl. Phys. Lett. 69, 363 (1996).